Epi-n-IZO thin films/〈100〉 Si, GaAs and InP by L-MBE - A novel feasibility study for SIS type solar cells

Solar Energy

Volumn 77, Issue 2, 2004, Pages 193-201

  Ramamoorthy, K ^a   Jayachandran, M ^b   Sankaranarayanan, K ^a   Misra, Pankaj ^c   Kukreja, L M ^c   Sanjeeviraja, C ^a  

^a ALAGAPPA UNIVERSITY   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

Buffer layer on InP; Laser epitaxy; Semiconducting materials; Solar cells; Thin film structure and morphology

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRONIC PROPERTIES; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS); TRANSPARENT CONDUCTING OXIDES (TCO);

SOLAR ENERGY;

SEMICONDUCTOR;

EID: 3142756509     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2004.04.006     Document Type: Article

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