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Volumn 509, Issue 41, 2011, Pages 10062-10065
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Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film
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Author keywords
Annealing temperature; Burstein Moss effect; InZnO; Optical band gap
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Indexed keywords
AMORPHOUS STRUCTURES;
ANNEALING TEMPERATURES;
BAND GAPS;
BAND NARROWING;
BURSTEIN-MOSS EFFECTS;
ELECTRICAL AND OPTICAL PROPERTIES;
GLASS SUBSTRATES;
INDIUM ZINC OXIDES;
INDIUM-ZINC-OXIDE FILMS;
INZNO;
OPTICAL AND ELECTRICAL PROPERTIES;
OPTICAL BANDS;
RADIO FREQUENCY MAGNETRON SPUTTERING;
ANNEALING;
CARRIER CONCENTRATION;
ELECTRIC PROPERTIES;
INDIUM;
OPTICAL PROPERTIES;
OXIDE FILMS;
SUBSTRATES;
THIN FILMS;
ZINC;
ZINC OXIDE;
AMORPHOUS FILMS;
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EID: 80052971293
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2011.08.033 Document Type: Article |
Times cited : (69)
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References (21)
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