Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

Semiconductor Science and Technology

Volumn 24, Issue 9, 2009, Pages

  Huang, Changgang ^a,b   Wang, Meili ^a   Liu, Quanlin ^b   Cao, Yongge ^a,c   Deng, Zhonghua ^a   Huang, Zhi ^a   Liu, Yuan ^a   Huang, Qiufeng ^a   Guo, Wang ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^c NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; CODEPOSITION; DEPOSITION PROCESS; DOPANT CONCENTRATIONS; FILM SURFACES; INDIUM ZINC OXIDES; MISFIT STRAINS; RADIO FREQUENCY MAGNETRON SPUTTERING; VISIBLE RANGE; ZNO;

BIOACTIVITY; CARRIER CONCENTRATION; GALVANOMAGNETIC EFFECTS; GROWTH KINETICS; HALL MOBILITY; INDIUM; SEMICONDUCTOR DOPING; SURFACE SEGREGATION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77951587973     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/9/095019     Document Type: Article

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