Temperature-dependent thermal conductivities of 1D semiconducting nanowires via four-point-probe 3-ω method

Nanotechnology

Volumn 24, Issue 49, 2013, Pages

  Lee, Seung Yong ^a   Lee, Mi Ri ^a,b   Park, No Won ^c   Kim, Gil Sung ^b   Choi, Heon Jin ^d   Choi, Tae Youl ^e   Lee, Sang Kwon ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Chonbuk National University   (South Korea)

^c Chung Ang University   (South Korea)

^d Yonsei University   (South Korea)

^e Center for Advanced Research and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE NANOWIRES; PHONON-BOUNDARY SCATTERING; SEMICONDUCTING BEHAVIOR; SEMICONDUCTING NANOWIRES; SUSPENDED STRUCTURE; TEMPERATURE-DEPENDENT THERMAL CONDUCTIVITY; THERMO-ELECTRIC MATERIALS; VAPOR-LIQUID-SOLID GROWTH MECHANISM;

DISPERSIONS; LITHOGRAPHY; NANOWIRES; PHONON SCATTERING; PROBES; SEMICONDUCTOR GROWTH; THERMOELECTRICITY; VAPORS;

THERMAL CONDUCTIVITY;

GALLIUM; GALLIUM NITRIDE; NANOWIRE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; EQUIPMENT DESIGN; NANOTECHNOLOGY; PHONON; SEMICONDUCTOR; TEMPERATURE;

ELECTRODES; EQUIPMENT DESIGN; GALLIUM; NANOTECHNOLOGY; NANOWIRES; PHONONS; SEMICONDUCTORS; TEMPERATURE; ZINC OXIDE;

EID: 84888426156     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/49/495202     Document Type: Article

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