Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

Materials Research Bulletin

Volumn 47, Issue 5, 2012, Pages 1264-1272

  Mamand, S M ^a   Omar, M S ^b   Muhammad, A J ^c  

^a UNIVERSITY OF SULAIMANI   (Iraq)

^b SALAHADDIN UNIVERSITY   (Iraq)

^c KIRKUK UNIVERSITY   (Iraq)

Author keywords

Dislocation density; GaN nanowires; Lattice defects; Lattice thermal conductivity; Phonon scattering

Indexed keywords

CALCULATED VALUES; CALLAWAY MODEL; DISLOCATION DENSITIES; GAN NANOWIRES; GROUP VELOCITIES; GRUNEISEN PARAMETERS; HIGH TEMPERATURE; LATTICE THERMAL CONDUCTIVITY; NANOSCALE SIZE; PHONON CONFINEMENT; SIZE EFFECTS; STRUCTURE DEPENDENT; TEMPERATURE RANGE; TRANSVERSE MODE; UMKLAPP PROCESS; WURTZITE GAN NANOWIRES;

CRYSTAL DEFECTS; CRYSTAL LATTICES; GALLIUM NITRIDE; NANOWIRES; PHONON SCATTERING; PHONONS; SURFACE ROUGHNESS; THERMOELECTRICITY; ZINC SULFIDE;

THERMAL CONDUCTIVITY;

EID: 84859498125     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.12.025     Document Type: Article

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