Highly enhanced thermoelectric figure of merit of a β-SiC nanowire with a nanoelectromechanical measurement approach

Applied Physics A: Materials Science and Processing

Volumn 106, Issue 4, 2012, Pages 955-960

  Lee, Kyung Min ^a   Lee, Sang Kwon ^b   Choi, Tae Youl ^c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Chonbuk National University   (South Korea)

^c Center for Advanced Research and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIMENSIONLESS FIGURE OF MERIT; FOUR POINT PROBE; MAXIMUM VALUES; NANO MANIPULATOR; NANO-ELECTRODES; NANO-ELECTROMECHANICAL; ONE STOP; SIC NANOWIRE; THERMAL AND ELECTRICAL CONDUCTIVITY; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; NANOWIRES; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

SILICON CARBIDE;

EID: 84858862510     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6718-0     Document Type: Article

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