P-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 190-194

  Park, Seung Hwan ^a,e   Minegishi, Tsutomu ^a   Oh, Dong Cheol ^b   Chang, Ji Ho ^c   Yao, Takafumi ^a   Taishi, Toshinori ^d   Yonenaga, Ichiro ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b Hoseo University   (South Korea)

^c Korea Maritime University   (South Korea)

^d TOHOKU UNIVERSITY   (Japan)

^e Saint Gobain Research Corporate Limited   (China)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DEFECTS; EPITAXIAL GROWTH; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; ZINC OXIDE;

BACKGROUND ELECTRON CONCENTRATION; CRYSTALLINE QUALITY; CRYSTALLINITIES; NON-RADIATIVE RECOMBINATIONS; P TYPE CONDUCTIVITY; SEMICONDUCTING II-VI MATERIALS; THERMAL-ANNEALING; ZNO FILMS;

SEMICONDUCTOR DOPING;

EID: 84888373248     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.042     Document Type: Article

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