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Volumn 108, Issue 9, 2010, Pages

Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy

(10) Park, S H a Minegishi, T a Lee, H J a Park, J S a Im, I H a Yao, T a Oh, D C b Taishi, T c Yonenaga, I c Chang, J H d

a TOHOKU UNIVERSITY (Japan)

b Hoseo University (South Korea)

c TOHOKU UNIVERSITY (Japan)

d Korea Maritime University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR-BOUND EXCITONS; CARRIER COMPENSATION; CO-DOPED; CO-DOPED ZNO; CO-DOPING; CRYSTALLINITIES; DISLOCATION SCATTERING; DONOR-ACCEPTOR PAIRS; ELECTRICAL PROPERTY; EMISSION LINES; HIGH CRYSTALLINITY; N INCORPORATION; P-TYPE ZNO FILM; PHOTOLUMINESCENCE SPECTRUM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ZNO FILMS;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; METALLIC FILMS; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; ZINC OXIDE;

TELLURIUM COMPOUNDS;

EID: 78649301106 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3498800 Document Type: Article

Times cited : (23)

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