Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 95, Issue 15, 2009, Pages

  Oh, D C ^a   Park, S H ^a   Goto, H ^a   Im, I H ^a   Jung, M N ^a   Chang, J H ^a   Yao, T ^a   Song, J S ^b   Bae, C H ^c   Han, C S ^c   Koo, K W ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b NeosemiTech Corporation   (South Korea)

^c Hoseo University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT GAS; AMBIENT TEMPERATURES; COMPLEX DEFECTS; CRITICAL TEMPERATURES; CURRENT INCREASE; ELECTRICAL PROPERTY; ELECTRICAL RESISTANCES; ZNO FILMS;

CRYSTAL GROWTH; DEFECTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HEAT TREATMENT; METALLIC FILMS; MOLECULAR BEAMS; PHOTOCURRENTS; SEMICONDUCTING ZINC COMPOUNDS; TEMPERATURE; THERMAL EFFECTS; ZINC OXIDE;

HEAT RESISTANCE;

EID: 70350074344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3247889     Document Type: Article

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