Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 204-208

  Duttagupta, Shubham ^a   Ma, Fa Jun ^a   Hoex, Bram ^a   Aberle, Armin G ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Boron doped p+ emitters; Crystalline silicon; Plasma enhanced chemical vapor deposition; Silicon oxide Silicon nitride dielectric stacks; Surface passivation

Indexed keywords

BORON-DOPED P; CHEMICAL VAPOR DEPOSITED; CRYSTALLINE SILICONS; DIELECTRIC STACK; EMITTER SATURATION CURRENT DENSITY; SOLAR-CELL APPLICATIONS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON NITRIDE; SILICON WAFERS; SOLAR CELLS; TEMPERATURE; VAPORS; VOLTAGE MEASUREMENT;

SILICON OXIDES;

EID: 84888349613     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.09.004     Document Type: Article

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