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Volumn , Issue , 2012, Pages 1036-1039

State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells

Author keywords

boron emitter; firing activation; industrial PECVD AlOx SiN x stacks; surface passivation

Indexed keywords

EMITTER SATURATION CURRENT DENSITY; FAST FIRING; IDEAL DIODES; INDUSTRIAL PECVD ALOX/SIN X STACKS; INTERFACE DEFECTS; NEGATIVE CHARGE; PLANAR EMITTERS; SURFACE PASSIVATION; THERMAL ACTIVATION;

EID: 84869476243     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317780     Document Type: Conference Paper
Times cited : (8)

References (13)
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  • 8
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  • 12
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    • Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride
    • F. W. Chen, T.T.A. Li and J. E. Cotter, "Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride," Applied Physics Letters, Vol. 88, pp. 263514, 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.