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Volumn 22, Issue , 2003, Pages 425-440

Investigation of high-k dielectric properties with the non-contact SASS technique

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LEAKAGE CURRENT; NON-CONTACT HIGH-K MONITORING TECHNIQUES; PULSED CORONA CHARGING; SELF-ADJUSTING STEADY STATE (SASS);

EID: 3042817333     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (13)
  • 3
    • 33646215905 scopus 로고    scopus 로고
    • (Batz-sur-mer, France October) to be published
    • P. Edelman, et al., 2003 DRIP X Conference (Batz-sur-mer, France October 2003) to be published.
    • (2003) 2003 DRIP X Conference
    • Edelman, P.1
  • 4
    • 0000668967 scopus 로고    scopus 로고
    • High-k Oxides by Atomic Layer Chemical Vapour Deposition
    • M. Tuominen, et al., "High-k Oxides by Atomic Layer Chemical Vapour Deposition", Electrochemical Society Proceedings, 2000-9, 271 (2000).
    • (2000) Electrochemical Society Proceedings , vol.2000 , Issue.9 , pp. 271
    • Tuominen, M.1
  • 8
    • 33646214272 scopus 로고    scopus 로고
    • In-line electrical metrology for high-k Gate dielectrics deposited by atomic layer chemical vapor deposition
    • H. De Witte, et al., "In-line Electrical Metrology for High-k Gate Dielectrics Deposited by Atomic Layer Chemical Vapor Deposition", Electrochemical Society Proceedings 2002-11, 153 (2002).
    • (2002) Electrochemical Society Proceedings , vol.2002 , Issue.11 , pp. 153
    • De Witte, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.