High-power GaN-based light-emitting diodes with transparent indium zinc oxide films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2516-2519

  Uang, Kai Ming ^a   Wang, Shui Jinn ^a   Chen, Shiue Lung ^a   Chin Kun, W U ^a   Chang, Shu Cheng ^a   Chen, Tron Min ^a   Liou, Bor Wen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; Indium zinc oxide (IZO); Light output; Power LEDs; Transparent conduction layer

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; LIGHT EMITTING DIODES; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPUTTER DEPOSITION; ULTRAVIOLET DETECTORS;

GAN; INDIUM ZINC OXIDE (IZO); LIGHT OUTPUT; POWER LED; TRANSPARENT CONDUCTION LAYERS;

GALLIUM NITRIDE;

EID: 21244496765     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2516     Document Type: Conference Paper

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