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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition

(6) Liu, Kuang Pi a Yen, Kuo Yi a Lin, Ping Yuan a Gong, Jyh Rong a Wu, Kun Da b Chen, Wei Li b

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE QUALITY; DIETHYLZINC; EXTRINSIC STACKING FAULT; HETERO INTERFACES; HIGH RESOLUTION; LOW TEMPERATURES; NITROUS OXIDE; PARTIAL DISLOCATIONS; SAPPHIRE SUBSTRATES; STRUCTURAL CHARACTERISTICS; THREADING DISLOCATION; TRANSMISSION ELECTRON; X RAY DIFFRACTOMETRY; X RAY ROCKING CURVE; ZNO; ZNO BUFFER LAYER; ZNO FILMS;

ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRONS; METALLIC FILMS; NITROGEN OXIDES; OXIDE FILMS; SAPPHIRE; STACKING FAULTS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79955154479 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3523289 Document Type: Article

Times cited : (6)

References (16)

1
- 0033880307
- 0361-5235, 10.1007/s11664-000-0097-1
- Y. Liu, C. R. Gorla, S. Liang, N. Emanetoglu, H. Shen, and M. Wraback, J. Electron. Mater. 0361-5235 29, 69 (2000). 10.1007/s11664-000-0097-1
- (2000) J. Electron. Mater. , vol.29 , pp. 69
- Liu, Y.¹ Gorla, C.R.² Liang, S.³ Emanetoglu, N.⁴ Shen, H.⁵ Wraback, M.⁶

2
- 0001461627
- 0003-6951, 10.1063/1.125740
- H. Kim, C. M. Gilmore, J. S. Horwitz, A. Piqú, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi, and D. B. Chrisey, Appl. Phys. Lett. 0003-6951 76, 259 (2000). 10.1063/1.125740
- (2000) Appl. Phys. Lett. , vol.76 , pp. 259
- Kim, H.¹ Gilmore, C.M.² Horwitz, J.S.³ Piqú, A.⁴ Murata, H.⁵ Kushto, G.P.⁶ Schlaf, R.⁷ Kafafi, Z.H.⁸ Chrisey, D.B.⁹

3
- 0035967550
- 2 solar cells - Aspects of heterojunction formation
- DOI 10.1016/S0040-6090(00)01737-5, PII S0040609000017375
- U. Rau and M. Schmidt, Thin Solid Films 0040-6090 387, 141 (2001). 10.1016/S0040-6090(00)01737-5 (Pubitemid 32272940)
- (2001) Thin Solid Films , vol.387 , Issue.1-2 , pp. 141-146
- Rau, U.¹ Schmidt, M.²

4
- 7044225002
- 0021-8979, 10.1063/1.1785852
- A. Setiawan, Z. Vashaei, M. W. Cho, T. Yao, H. Kato, M. Sano, K. Miyamoto, I. Yonenaga, and H. K. Ko, J. Appl. Phys. 0021-8979 96, 3763 (2004). 10.1063/1.1785852
- (2004) J. Appl. Phys. , vol.96 , pp. 3763
- Setiawan, A.¹ Vashaei, Z.² Cho, M.W.³ Yao, T.⁴ Kato, H.⁵ Sano, M.⁶ Miyamoto, K.⁷ Yonenaga, I.⁸ Ko, H.K.⁹

5
- 0037011454
- Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition
- DOI 10.1016/S0040-6090(02)00658-2, PII S0040609002006582
- H. Kim, J. S. Horowitz, S. B. Qadri, and D. B. Chrisey, Thin Solid Films 0040-6090 420-421, 107 (2002). 10.1016/S0040-6090(02)00658-2 (Pubitemid 35465862)
- (2002) Thin Solid Films , vol.420-421 , pp. 107-111
- Kim, H.¹ Horwitz, J.S.² Qadri, S.B.³ Chrisey, D.B.⁴

6
- 0031546852
- 0169-4332, 10.1016/S0169-4332(96)01022-7
- A. Yamada, B. Sang, and M. Konagi, Appl. Surf. Sci. 0169-4332 112, 216 (1997). 10.1016/S0169-4332(96)01022-7
- (1997) Appl. Surf. Sci. , vol.112 , pp. 216
- Yamada, A.¹ Sang, B.² Konagi, M.³

7
- 1242307310
- 0003-6951, 10.1063/1.1642755
- B. P. Zhang, N. T. Binh, Y. Segawa, Y. Kashiwaba, and K. Haga, Appl. Phys. Lett. 0003-6951 84, 586 (2004). 10.1063/1.1642755
- (2004) Appl. Phys. Lett. , vol.84 , pp. 586
- Zhang, B.P.¹ Binh, N.T.² Segawa, Y.³ Kashiwaba, Y.⁴ Haga, K.⁵

8
- 33846035361
- Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates
- DOI 10.1063/1.2428489
- C. Liu, S. H. Chang, T. W. Noh, M. Abouzaid, P. Ruterana, H. H. Lee, D. -W. Kim, and J. -S. Chung, Appl. Phys. Lett. 0003-6951 90, 011906 (2007). 10.1063/1.2428489 (Pubitemid 46068305)
- (2007) Applied Physics Letters , vol.90 , Issue.1 , pp. 011906
- Liu, C.¹ Chang, S.H.² Noh, T.W.³ Abouzaid, M.⁴ Ruterana, P.⁵ Lee, H.H.⁶ Kim, D.-W.⁷ Chung, J.-S.⁸

9
- 0343627966
- MBE growth of high-quality ZnO films on epi-GaN
- DOI 10.1016/S0022-0248(99)00726-5
- H. J. Ko, Y. F. Chen, S. K. Hong, and T. Yao, J. Cryst. Growth 0022-0248 209, 816 (2000). 10.1016/S0022-0248(99)00726-5 (Pubitemid 30556325)
- (2000) Journal of Crystal Growth , vol.209 , Issue.4 , pp. 816-821
- Ju Ko, H.¹ Chen, Y.² Ku Hong, S.³ Yao, T.⁴

10
- 0000809027
- 0003-6951, 10.1063/1.1311603
- P. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki, K. Nakahara, T. Tanabe, and H. Takasu, Appl. Phys. Lett. 0003-6951 77, 1801 (2000). 10.1063/1.1311603
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1801
- Fons, P.¹ Iwata, K.² Yamada, A.³ Matsubara, K.⁴ Niki, S.⁵ Nakahara, K.⁶ Tanabe, T.⁷ Takasu, H.⁸

11
- 44149086847
- 0022-0248, 10.1016/j.jcrysgro.2008.03.016
- P. -Y. Lin, J. Cryst. Growth 0022-0248 310, 3024 (2008). 10.1016/j.jcrysgro.2008.03.016
- (2008) J. Cryst. Growth , vol.310 , pp. 3024
- Lin, P.-Y.¹

12
- 0035832834
- 0003-6951, 10.1063/1.1384907
- F. Vigú, P. Venńguès, S. V́zian, M. Laügt, and J. -P. Faurie, Appl. Phys. Lett. 0003-6951 79, 194 (2001). 10.1063/1.1384907
- (2001) Appl. Phys. Lett. , vol.79 , pp. 194
- Vigú, F.¹ Venńguès, P.² V́zian, S.³ Laügt, M.⁴ Faurie, J.-P.⁵

13
- 0029755411
- 0003-6951, 10.1063/1.116495
- B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 0003-6951 68, 643 (1995). 10.1063/1.116495
- (1995) Appl. Phys. Lett. , vol.68 , pp. 643
- Heying, B.¹ Wu, X.H.² Keller, S.³ Li, Y.⁴ Kapolnek, D.⁵ Keller, B.P.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

14
- 0000889459
- 0556-2805, 10.1103/PhysRevB.57.R15052
- C. Stampfl and Chris G. Van de Walle, Phys. Rev. B 0556-2805 57, R15052 (1998). 10.1103/PhysRevB.57.R15052
- (1998) Phys. Rev. B , vol.57 , pp. 15052
- Stampfl, C.¹ Van De Walle, C.G.²

15
- 12344330272
- Energetics and electronic structure of stacking faults in ZnO
- DOI 10.1103/PhysRevB.70.193206, 193206
- Y. Yan, G. M. Dalpian, M. M. Al-Jassim, and S. -H. Wei, Phys. Rev. B 0556-2805 70, 193206 (2004). 10.1103/PhysRevB.70.193206 (Pubitemid 40139457)
- (2004) Physical Review B - Condensed Matter and Materials Physics , vol.70 , Issue.19 , pp. 1-4
- Yan, Y.¹ Dalpian, G.M.² Al-Jassim, M.M.³ Wei, S.-H.⁴

16
- 0000392520
- 0021-8979, 10.1063/1.363264
- X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 0021-8979 80, 3228 (1996). 10.1063/1.363264
- (1996) J. Appl. Phys. , vol.80 , pp. 3228
- Wu, X.H.¹ Brown, L.M.² Kapolnek, D.³ Keller, S.⁴ Keller, B.⁵ Denbaars, S.P.⁶ Speck, J.S.⁷

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