PH Response of Silicon Nano wire Sensors: Impact of Nano wire Width and Gate Oxide

Sensors and Materials

Volumn 25, Issue 8, 2013, Pages 567-576

  Bedner, Kristine ^a   Guzenko, Vitaliy Anatolijovic ^a   Tarasov, Alexey ^a   Wipf, Mathias ^b   Stoop, Ralph Lukas ^b   Just, David ^b   Rigante, Sara ^c   Fu, Wangyang ^b   Minamisawa, Renato Amaral ^a   David, Christian ^a   Caiame, Michel ^b   Gobrecht, Jens ^a   Schonenberger, Christian ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b UNIVERSITY OF BASEL   (Switzerland)

^c EPFL   (Switzerland)

Author keywords

Gate oxide; Ion sensitive field effect transistor; Nanowire sensor; PH response

Indexed keywords

FUTURE APPLICATIONS; GATE OXIDE; NANOWIRE SENSORS; OPERATING MODES; PH RESPONSE; SILICON NANOWIRES; SILICON ON INSULATOR WAFERS; SYSTEMATIC STUDY;

GATES (TRANSISTOR); HAFNIUM OXIDES; ION SENSITIVE FIELD EFFECT TRANSISTORS; NANOWIRES; PH SENSORS; SENSORS; SILICON; SILICON WAFERS;

GATE DIELECTRICS;

EID: 84887080866     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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