Preparation and photoelectric properties of La-doped ZnO films

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 11, 2013, Pages 4175-4179

  Xu, Jialin ^a   Hao, Sue ^a   Duan, Xiangbin ^a   Gu, Shuo ^b   Meng, Xianwei ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b The George Washington University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CONDUCTIVE PROPERTIES; ELECTRICAL CONDUCTIVITY; PHOTOELECTRIC PROPERTY; RESEARCH RESULTS; SEMI-CONDUCTING METAL OXIDES; TRANSMISSION PROPERTY; VISIBLE REGION;

FILM PREPARATION; GRAIN GROWTH; LIGHT TRANSMISSION; METALLIC FILMS; PHOTOELECTRICITY; SOL-GEL PROCESS;

SEMICONDUCTOR DOPING;

EID: 84887028047     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-013-1379-8     Document Type: Article

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