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Volumn 21, Issue 16, 2009, Pages 1613-1617

Ultralow-threshold laser realized in zinc oxide

(11) Hai, Zhu b Shan, Chong Xin a Yao, Bin a Li, Bing Hui a Zhang, Ji Ying a Zhang, Zheng Zhong a Zhao, Dong Xu a Shen, De Zhen a Fan, Xi Wu a Lu, You Ming c Tang, Zi Kang d

a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

b CHANGCHUN INSTITUTE OF OPTICS (China)

c SHENZHEN UNIVERSITY (China)

d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; BAND ALIGNMENTS; CONDUCTION-BAND ELECTRONS; CURRENT-DRIVEN; DEEP LEVEL EMISSION; MG-DOPED; NEAR BAND EDGE EMISSIONS; SEMICONDUCTOR LASER DIODES; THRESHOLD CURRENTS; THRESHOLD LASERS; ZNO;

EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; ZINC; ZINC OXIDE;

SEMICONDUCTOR LASERS;

EID: 66149109586 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200802907 Document Type: Article

Times cited : (215)

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