Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Wang, T ^a   Wu, H ^a   Zheng, H ^a   Wang, J B ^a   Wang, Z ^a   Chen, C ^a   Xu, Y ^a   Liu, C ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE EMISSION; ELECTROLUMINESCENCE SPECTRA; FORWARD BIAS; GROWTH DIRECTIONS; NON-POLAR; NONPOLAR M-PLANE; REVERSE BIAS; ZNO FILMS;

ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLIC FILMS; ZINC OXIDE;

ALUMINUM;

EID: 84876362199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801761     Document Type: Article

References (23)

1. Q. Yang, W. H. Wang, S. Xu, and Z. L. Wang, Nano Lett. 11, 4012 (2011). 10.1021/nl202619d
2. O. Lupan, T. Pauporte, and B. Viana, Adv. Mater. 22, 3298 (2010). 10.1002/adma.201000611
3. J. J. Cole, X. Wang, R. J. Knuesel, and H. O. Jacobs, Nano Lett. 8, 1477 (2008). 10.1021/nl0804809
4. Y. Q. Bie, Z. M. Liao, P. W. Wang, Y. B. Zhou, X. B. Han, Y. Ye, Q. Zhao, X. S. Wu, L. Dai, J. Xu, L. W. Sang, J. J. Deng, K. Laurent, Y. Lepringce-Wang, and D. P. Yu, Adv. Mater. 22, 4284 (2010). 10.1002/adma.201000985
5. J. B. K. Law and J. T. L. Thong, Appl. Phys. Lett. 88, 133114 (2006). 10.1063/1.2190459
6. H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu, and Z. K. Tong, Adv. Mater. 21, 1613 (2009). 10.1002/adma.200802907
7. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, Adv. Mater. 18, 2720 (2006). 10.1002/adma.200502633
8. Y. Ryu, T. Lee, J. Leem, and H. White, Appl. Phys. Lett. 83, 4032 (2003). 10.1063/1.1625787
9. X. L. Guo, J. H. Choi, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 1 40, 177 (2001) 10.1143/JJAP.40.L177.
10. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, and Y. Segawa, Nature Mater. 4, 42 (2005). 10.1038/nmat1284
11. H. Ohta, M. Orita, M. Hirano, and H. Hosono, J. Appl. Phys. 89, 5720 (2001). 10.1063/1.1367315
12. J. Ye, S. Gu, S. Zhu, W. Liu, S. Liu, R. Zhang, Y. Shi, and Y. Zheng, Appl. Phys. Lett. 88, 182112 (2006). 10.1063/1.2201895
13. Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Appl. Phys. Lett. 83, 2943 (2003). 10.1063/1.1615308
14. R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, and T. Okada, Appl. Phys. B 94, 33 (2009). 10.1007/s00340-008-3257-2
15. J. Y. Lee, J. H. Lee, H. Seung Kim, C.-H. Lee, H.-S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, Thin Solid Films 517, 5157 (2009). 10.1016/j.tsf.2009.03.028
16. P. Waltereit, O. Brandt, A. Trampert, H. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. Ploog, Nature 406, 865 (2000). 10.1038/35022529
17. N. Fujimura, T. Nishihara, S. Goto, J. Xu, and T. Ito, J. Cryst. Growth 130, 269 (1993). 10.1016/0022-0248(93)90861-P
18. T. Wang, H. Wu, C. Chen, and C. Liu, Appl. Phys. Lett. 100, 011901 (2012). 10.1063/1.3673346
19. S. Y. Pung, K. L. Choy, X. Hou, and C. X. Shan, Nanotechnology 19, 435609 (2008). 10.1088/0957-4484/19/43/435609
20. T. Wang, H. Wu, Z. Wang, C. Chen, and C. Liu, Appl. Phys. Lett. 101, 161905 (2012). 10.1063/1.4760271
21. J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, J. Appl. Phys. 51, 4260 (1980). 10.1063/1.328243
22. D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, J. Appl. Phys. 87, 801 (2000). 10.1063/1.371944
23. J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006). 10.1063/1.2213170