Ultraviolet electroluminescence properties of the p-NiO/n-GaN-based heterojunction diodes

Semiconductor Science and Technology

Volumn 26, Issue 12, 2011, Pages

  Wang, Haoning ^a   Fang, Guojia ^a   Long, Hao ^a   Li, Songzhan ^a   Mo, Xiaoming ^a   Huang, Huihui ^a   Zhou, Hai ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DIAGRAMS; HETEROJUNCTION DIODES; IV CHARACTERISTICS; RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTOR DIODES;

ELECTROLUMINESCENCE;

EID: 81555203204     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/12/125015     Document Type: Article

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