Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy

RSC Advances

Volumn 2, Issue 23, 2012, Pages 8631-8636

  Zhang, Zhang ^a,b   Senz, Stephan ^b   Zhao, Fuli ^c   Chen, Lijun ^b   Gao, Xingsen ^a   Liu, J M ^d  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c SUN YAT SEN UNIVERSITY   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM PHOSPHIDE; NANOWIRES; SEMICONDUCTING GALLIUM; SILICON; SINGLE CRYSTALS; ZINC SULFIDE;

ATOMIC PLANES; BAND-TO-BAND RECOMBINATION; CRYSTALLOGRAPHIC STRUCTURE; FLOW MECHANISMS; GROWTH DIRECTIONS; INDIRECT BAND GAP; NANOWIRE ARRAYS; VERTICAL ALIGNMENT;

CHEMICAL BEAM EPITAXY;

EID: 84886376020     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c2ra21013d     Document Type: Article

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