Sterically induced shape and crystalline phase control of GaP nanocrystals

Journal of the American Chemical Society

Volumn 124, Issue 46, 2002, Pages 13656-13657

  Kim, Yong Ho ^a   Jun, Young wook ^a   Jun, Byung Ho ^b   Lee, Sang Min ^b   Cheon, Jinwoo ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NANOPARTICLE; PHOSPHORUS DERIVATIVE;

ANISOTROPY; ARTICLE; CRYSTAL; INFRARED RADIATION; LUMINESCENCE; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037145990     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja027575b     Document Type: Article

References (29)

1. (a) Alivisatos, A. P. J. Phys. Chem. 1996, 100, 13226.
2. (b) Hu, J.; Odom, T. W.; Lieber, C. M. Acc. Chem. Res. 1999, 32, 435.
3. (c) Cui, Y.; Wei, Q.; Park, H.; Lieber, C. M. Science 2001, 293, 1289.
4. Hu, J.; Li, L.; Yang, W.; Manna, L.; Wang, L.; Alivisatos, A. P. Science 2001, 292, 2060.
5. Wang, J.; Gudiksen, M. S.; Duan, X.; Cai, Y.; Lieber, C. M. Science 2001, 293, 1455.
6. (a) Peng, X.; Manna, L.; Yang, W.; Wickham, J.; Scher, E.; Kadavanich, A.; Alivisatos, A. P. Nature 2000, 404, 59.
7. (b) Manna, L.; Scher, E. C.; Alivisatos, A. P. J. Am. Chem. Soc, 2000, 122, 12700.
8. (c) Peng, A.; Peng, X. G. J. Am. Chem. Soc. 2001, 123, 183.
9. (d) Peng, A.; Peng, X. G. J. Am. Chem. Soc. 2001, 123, 1389.
10. (e) Jun, Y.; Lee, S.-M.; Kang, N.-J.; Cheon, J. J. Am. Chem. Soc. 2001, 123, 5150.
11. (f) Jun, Y.; Jung, Y.; Cheon, J. J. Am. Chem. Soc. 2002, 124, 615.
12. Huynh, W. U.; Dittmer, J. J.; Alivisatos, A. P. Science 2002, 295, 2425.
13. (a) Li, L. S.; Hu, J. T.; Yang, W. D.; Alivisatos, A. P. Nano Lett. 2001, 1, 349.
14. (b) Mohamed, M. B.; Burda, C.; El-Sayed, M. A. Nano Lett. 2001, 1, 589.
15. Gaponenko, S. V. Optical Properties of Semiconductor Nanocrystals; Cambridge University Press: Cambridge, 1998.
16. (a) Micic O. I.; Curtis, C. J.; Jones, K. M.; Sprague, J. R.; Nozik, A. J. J. Phys. Chem. 1994, 98, 4966.
17. (b) Micic, O. I.; Ahrenkiel, S. P.; Bertram, D.; Nozik, A. J. Appl. Phys. Lett. 1999, 75, 478.
18. Olshavsky, M. A.; Goldstein, A. N.; Alivisatos, A. P. J. Am. Chem. Soc. 1990, 112, 9238.
19. Trentler, T. J.; Goel, S. C.; Hickman, K. M.; Viano, A. M.; Chiang, M. Y.; Beatty, A. M.; Gibbons, P. C.; Buhro, W. E. J. Am. Chem. Soc. 1997, 119, 2172.
20. 3 was synthesized with modification of a literature method. See: Arif, A. M.; Benac, B. L.; Cowley, A. H. J. Chem. Soc., Chem. Commun. 1986, 1543.
21. JCPDS cards, No. 32-0397 (zinc blende GaP) and No. 80-0002 (wurtizte GaP).
22. See Supporting Information.
23. Yeh, C.-Y.; Lu, Z. W.; Froyen, S.; Zunger, A. Phys. Rev. B 1992, 46, 10086.
24. Narayanan, V.; Mahajan, S. Philos. Mag. A 2000, 80, 555.
25. In comparison, surfactant effects on crystalline phases in diffusion controlled growth of CdSe have been documented. See: Qu, L.; Peng, X. J. Am. Chem. Soc. 2002, 124, 2049.
26. This is because wurtzite structure has eclipsed conformation in 002 directions, while it has staggered conformation in other directions.
27. The exciton Bohr radii of GaP are 1.45 nm for indirect transition and 5.5 nm for direct transition. See ref 19.
28. Nozik, A. J.; et al. J. Phys. Chem. 1995, 99, 7754.
29. Rama Krishna, M. V.; Friesner, R. A. J. Chem. Phys. 1991, 95, 8309.