Ordered High-Density Si [100] nanowire arrays epitaxially grown by bottom imprint method

Advanced Materials

Volumn 21, Issue 27, 2009, Pages 2824-2828

  Zhang, Zhang ^a   Shimizu, Tomohiro ^a   Senz, Stephan ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AAO TEMPLATE; ANODIC ALUMINUM OXIDE; AU NANOPARTICLE; E BEAM EVAPORATION; EPITAXIAL SI; EPITAXIALLY GROWN; HIGH-DENSITY; NANOWIRE ARRAYS; POROUS STRUCTURES; PROTECTIVE LAYERS; SI (100) SUBSTRATE;

ALUMINA; ALUMINUM; NANOWIRES; POLYSTYRENES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

GOLD;

EID: 67651097576     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802156     Document Type: Article

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