Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 378, Issue , 2013, Pages 193-197

  Baba, M ^a   Toh, K ^a   Toko, K ^a   Hara, K O ^b   Usami, N ^b,d   Saito, N ^c   Yoshizawa, N ^c   Suemasu, T ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Large grain; MBE; Semiconducting silicides; Solar cell

Indexed keywords

ANNEALING; DEPOSITION; DEPOSITION RATES; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SILICIDES; SOLAR CELLS;

GRAIN SIZE; LARGE-GRAIN; POST ANNEALING; REACTIVE DEPOSITION EPITAXY; SI (1 1 1); SI(111) SUBSTRATE; TRANSMISSION ELECTRON MICROGRAPH; TWO-STEP GROWTH METHODS;

EPITAXIAL GROWTH;

EID: 84885476428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.176     Document Type: Article

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