Leveraging crystal anisotropy for deterministic growth of inas quantum dots with narrow optical linewidths

Nano Letters

Volumn 13, Issue 10, 2013, Pages 4870-4875

  Yakes, Michael K ^a   Yang, Lily ^a   Bracker, Allan S ^a   Sweeney, Timothy M ^a   Brereton, Peter G ^a,c   Kim, Mijin ^b   Kim, Chul Soo ^a   Vora, Patrick M ^a   Park, Doewon ^a   Carter, Samuel G ^a   Gammon, Daniel ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SOTERA DEFENSE SOLUTIONS   (United States)

^c UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

InAs; molecular beam epitaxy; Quantum dot; quantum information; single photon source; site controlled

Indexed keywords

ANISOTROPY; CRYSTALLIZATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; NUCLEATION; QUANTUM OPTICS;

CONVENTIONAL TECHNIQUES; CRYSTAL ANISOTROPY; DETERMINISTIC GROWTH; INAS; NANOPATTERNED SUBSTRATES; QUANTUM INFORMATION; SINGLE-PHOTON SOURCE; SITE-CONTROLLED;

SEMICONDUCTOR QUANTUM DOTS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ANISOTROPY; ARTICLE; CHEMISTRY; CRYSTALLIZATION; NANOTECHNOLOGY; PARTICLE SIZE;

ANISOTROPY; ARSENICALS; CRYSTALLIZATION; GALLIUM; INDIUM; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS;

EID: 84885446589     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402744s     Document Type: Article

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