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Physical Review Letters

Volumn 108, Issue 10, 2012, Pages

Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

(13) Houel, J a Kuhlmann, A V a Greuter, L a Xue, F a Poggio, M a Warburton, R J a Gerardot, B D b Dalgarno, P A b Badolato, A c Petroff, P M d Ludwig, A a,e Reuter, D e Wieck, A D e

a UNIVERSITY OF BASEL (Switzerland)

b HERIOT WATT UNIVERSITY (United Kingdom)

c UNIVERSITY OF ROCHESTER (United States)

d University of California (United States)

e RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; CHARGE STATE; FIELD-EFFECT DEVICES; GAAS; LOCAL CHARGE; LOCAL ENVIRONMENTS; LOCALIZED DEFECTS; SELF ASSEMBLED QUANTUM DOTS;

DEFECTS; LASER SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84857846106 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.107401 Document Type: Article

Times cited : (164)

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