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Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

(7) Pfau, T J a Gushterov, A a Reithmaier, J P a Cestier, I b Eisenstein, G b Linder, E b Gershoni, D b

a UNIVERSITY OF KASSEL (Germany)

b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE VALUES; CONFOCAL MICROPHOTOLUMINESCENCE; ETCHED HOLES; GAAS; INAS QUANTUM DOTS; LOW DENSITY; LOW TEMPERATURE PHOTOLUMINESCENCE; QUANTUM DOT; RESIDUAL DEFECTS; SECOND LAYER; SEEDING LAYERS; TEMPLATE-BASED;

BUFFER LAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE DEFECTS;

OPTICAL WAVEGUIDES;

EID: 77956143087 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3265918 Document Type: Article

Times cited : (14)

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