An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

  Mehta, M ^a   Reuter, D ^b   Wieck, A D ^b   Michaelis De Vasconcellos, S ^a   Zrenner, A ^a   Meier, C ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FULL CONTROL; IN-SITU COMBINATIONS; MOLECULAR BEAM EPITAXIAL GROWTH; OPTICAL QUALITIES; OPTICALLY PUMPED; P-I-N JUNCTIONS; PRE-PATTERNING; QUANTUM DEVICE; QUANTUM DOT; QUANTUM DOTS; RANDOM NUCLEATION;

EPITAXIAL GROWTH; LIGHT EMITTING DIODES; OPTICAL WAVEGUIDES; PHYSICAL OPTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958074996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488812     Document Type: Article

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