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Volumn 519, Issue 8, 2011, Pages 2398-2401
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Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate
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Author keywords
GaN; Laser confocal scanning microscopy; Metalorganic chemical vapor deposition; Transmission electron microscopy
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Indexed keywords
CURVED SURFACES;
GAN;
GAN FILM;
LASER CONFOCAL SCANNING MICROSCOPY;
LATERAL GROWTH;
MAJOR FACTORS;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
PATTERNED SAPPHIRE SUBSTRATE;
PHOTOLUMINESCENCE MAPPING;
PROPAGATION DIRECTION;
STRUCTURAL IMPROVEMENTS;
TEM;
TEM OBSERVATIONS;
THREADING DISLOCATION;
DEFECTS;
FILM GROWTH;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SAPPHIRE;
SCANNING;
SOIL CONSERVATION;
STAIRS;
TRANSMISSION ELECTRON MICROSCOPY;
GALLIUM ALLOYS;
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EID: 79551486825
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.11.043 Document Type: Article |
Times cited : (19)
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References (20)
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