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Volumn 519, Issue 8, 2011, Pages 2398-2401

Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

Author keywords

GaN; Laser confocal scanning microscopy; Metalorganic chemical vapor deposition; Transmission electron microscopy

Indexed keywords

CURVED SURFACES; GAN; GAN FILM; LASER CONFOCAL SCANNING MICROSCOPY; LATERAL GROWTH; MAJOR FACTORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; PATTERNED SAPPHIRE SUBSTRATE; PHOTOLUMINESCENCE MAPPING; PROPAGATION DIRECTION; STRUCTURAL IMPROVEMENTS; TEM; TEM OBSERVATIONS; THREADING DISLOCATION;

EID: 79551486825     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.11.043     Document Type: Article
Times cited : (19)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.