Atomic layer etching of Al2O3 using BCl 3/Ar for the interface passivation layer of III-V MOS devices

Microelectronic Engineering

Volumn 110, Issue , 2013, Pages 457-460

  Min, K S ^a   Kang, S H ^a   Kim, J K ^a,c   Jhon, Y I ^b   Jhon, M S ^b   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ETCHING; HIGH-K DIELECTRIC; MOS DEVICES; PASSIVATION; STOICHIOMETRY; SURFACE ROUGHNESS;

ATOMIC LAYER ETCHING; ATOMIC SCALE; ETCH DEPTH; INTERFACE PASSIVATION LAYERS; LOW DAMAGES; PLASMA INDUCED DAMAGE;

ALUMINUM;

EID: 84885173244     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.170     Document Type: Article

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