Dry etching device quality high-κ GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1587-1589

  Li, X ^a   Zhou, H ^a   Hill, R J W ^a   Longo, P ^a   Holland, M ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Dry etching; Ga2O3 Gd2O3; GaxGdyOz; GaAs MOSFET; High oxide; RIE; SiCl4

Indexed keywords

AFM; CHAMBER PRESSURE; CHAMBER SYSTEM; DEVICE QUALITY; ETCH PROCESS; ETCHING CONDITION; ETCHING PROCESS; ETCHING PROFILE; FIELD-EFFECT; GA2O3-GD2O3; GAXGDYOZ; GAAS; GAAS MOSFET; GATE OXIDE; GATE STACKS; HIGH MOBILITY CHANNELS; LOW RESISTANCE; METAL OXIDE SEMICONDUCTOR; MOSFETS; OXFORD INSTRUMENTS; RF-POWER; SEM AND TEM;

CRYSTAL GROWTH; ELECTRIC CONTACTORS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GADOLINIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOSFET DEVICES; OHMIC CONTACTS; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM;

DRY ETCHING;

EID: 76949109327     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.011     Document Type: Article

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