Atomic layer etching of InP using a low angle forward reflected Ne neutral beam

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Park, S D ^a   Oh, C K ^a   Bae, J W ^a   Yeom, G Y ^a,c   Kim, T W ^b   Song, J I ^b   Jang, J H ^b  

^a Sungkyunkwan University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c National Program for Tera Level Devices   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON IRRADIATION; ETCHING; STOICHIOMETRY; SURFACE ROUGHNESS;

ATOMIC LAYER ETCHING; CRITICAL VALUES; ETCH MECHANISM; NEUTRAL BEAM IRRADIATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33746596653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221504     Document Type: Article

References (7)

1. J. B. Malherbe and W. O. Barnard, Surf. Sci. 255, 309 (1991).
2. B. Lamontagne, J. Stapledon, P. Chow-Chong, M. Buchanan, J. Fraser, J. Phillips, and M. Davies, J. Electrochem. Soc. 146, 1918 (1999).
3. L. Henry, C. Vaudry, A. Le Corre, D. Lecrosnier, P. Alnot, and J. Olivier, Electron. Lett. 25, 1257 (1989).
4. S. D. Athavale and D. J. Economou, J. Vac. Sci. Technol. B 14, 3702 (1996).
5. D. H. Lee, J. W. Bae, S. D. Park, and G. Y. Yeom, Thin Solid Films 398-399, 647 (2001).
6. J. B. Hudson, Surface Science (Wiley, New York, 1998).
7. D. R. Lide, CRC Handbook of Chemistry and Physics, 81st ed. (CRC, New York, 2001), pp. 4-63.