High mobility HfO2-based In0.53Ga0.47 As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Kim, Hyoung Sub ^a   Ok, Injo ^a   Zhu, Feng ^a   Zhang, M ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Majhi, Prashant ^b   Garcia Gutierrez, Domingo I ^b   Goel, Niti ^c   Tsai, W ^c   Gaspe, C K ^d   Santos, M B ^d   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

^d UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTICS; HIGH-MOBILITY;

HAFNIUM COMPOUNDS;

EID: 53349144094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990645     Document Type: Article

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