Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1124-1127

  Li, X ^a   Zhou, H ^a   Hill, R J W ^a   Wilkinson, C D W ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Compound semiconductor; Dry etching; Ga2O3(Gd2O3) RIE; GaxGdyOz; III V MOSFET

Indexed keywords

ELECTRON MOBILITY; GALLIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICES;

COMPOUND SEMICONDUCTORS; ETCHING PROFILE; LAYER IDENTIFICATION;

DRY ETCHING;

EID: 34247623126     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.045     Document Type: Article

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