TaN metal gate damage during high-k (Al2O3) high-temperature etch

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 949-952

  Paul, J ^a   Beyer, V ^a   Michalowski, P ^a   Beug, M F ^b   Bach, L ^b   Ackermann, M ^b   Wege, S ^b   Tilke, A ^b   Chan, N ^b   Mikolajick, T ^c   Bewersdorff Sarlette, U ^b   Knofler R ^b   Czernohorsky, M ^a   Ludwig, C ^b  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^c TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Al2O3; Decoupled plasma source; Dry etch; High temperature etch; High k dielectric; Metal gate; TaN; TANOS

Indexed keywords

AL2O3; DECOUPLED PLASMA SOURCE; DRY ETCH; HIGH TEMPERATURE ETCH; HIGH-K DIELECTRIC; METAL GATE; TAN; TANOS;

ALUMINUM; DIELECTRIC MATERIALS; METALS; PLASMA ETCHING; PLASMA SOURCES; TANTALUM COMPOUNDS;

TANNING;

EID: 67349197835     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.025     Document Type: Article

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