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Volumn 145, Issue , 2014, Pages 884-887

Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2

Author keywords

Conductivity; Defect; Photoluminescence; Raman scattering; ZnO

Indexed keywords

COMPENSATION EFFECTS; CONDUCTION TYPE; INTERSTITIAL OXYGEN; REPRODUCIBILITIES; RF-MAGNETRON SPUTTERING; SPECTRAL FEATURE; SUBSTITUTIONAL NITROGEN; ZNO;

EID: 84885119957     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2013.09.029     Document Type: Article
Times cited : (9)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.