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Volumn 145, Issue , 2014, Pages 884-887
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Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O 2/N2
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Author keywords
Conductivity; Defect; Photoluminescence; Raman scattering; ZnO
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Indexed keywords
COMPENSATION EFFECTS;
CONDUCTION TYPE;
INTERSTITIAL OXYGEN;
REPRODUCIBILITIES;
RF-MAGNETRON SPUTTERING;
SPECTRAL FEATURE;
SUBSTITUTIONAL NITROGEN;
ZNO;
DEFECTS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
ELECTRIC PROPERTIES;
FLOW OF GASES;
MAGNETRON SPUTTERING;
METALLIC FILMS;
OXYGEN VACANCIES;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
ZINC OXIDE;
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EID: 84885119957
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2013.09.029 Document Type: Article |
Times cited : (9)
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References (39)
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