Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV/O3-assisted annealing

AIP Advances

Volumn 2, Issue 3, 2012, Pages

  Lu, Li ^a   Echizen, Masahiro ^a   Nishida, Takashi ^a,b   Ishikawa, Yasuaki ^a,b   Uchiyama, Kiyoshi ^c   Uraoka, Yukiharu ^a,b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TSURUOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FABRICATION; FIELD EFFECT TRANSISTORS; IRRADIATION; SILICON; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

ANNEALING TEMPERATURES; HIGH FIELD EFFECT MOBILITY; LOW TEMPERATURES; LOW-TEMPERATURE FABRICATION; PYROLYSIS TEMPERATURE; SOLUTION-PROCESSED; THIN-FILM TRANSISTOR (TFTS); UV IRRADIATION;

THIN FILM TRANSISTORS;

EID: 84885034622     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4739052     Document Type: Article

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