Photo-process of tantalum oxide films and their characteristics

Japanese Journal of Applied Physics

Volumn 27, Issue 4R, 1988, Pages 506-511

  Matsui, Masahiro ^a   Oka, Satoshi ^a   Yamagishi, Koji ^a   Kuroiwa, Koichi ^a   Tarui, Yasuo ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Annealing; Film formation; High dielectric breakdown strength; High dielectric constant; Insulator; Low leakage current; Photo process; Photo CVD; Tantalum oxide

Indexed keywords

FILMS - DIELECTRIC; SEMICONDUCTOR DEVICES, MIS;

LEAKAGE CURRENT; PHOTO-PROCESS; TANTALUM OXIDE;

TANTALUM COMPOUNDS;

EID: 0024000206     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.506     Document Type: Article

References (10)

1. H. Shinriki, Y. Nishioka, Y. Ohji and K. Mukai: Int. Electron Device Meeting Tech. Dig. (IEEE, New York, 1986) p. 684.
2. C. Hashimoto, H. Oikawa and N. Honma: Extended Abstracts, 18th Conf. Solid State Devices and Materials, Tokyo, 1986 (Business Center for Academic Societies Japan, Tokyo, 1986) p. 253.
3. M. Saitoh, T. Mori and H. Tamura: Int. Electron Device Meeting Tech. Dig. (IEEE, New York, 1986) p. 680.
4. T. Kato and T. Itoh: Proc. 1983 VLSI Technology Symposium p. 86.
5. K. Yamagishi and Y. Tarui: Jpn. J. Appi. Phys. 25 (1986) L306.
6. H. Okabe: Photo-Chemistry of Small Molecules (John Wiley and Sons Inc., New York, 1978) 1st ed., Chap. V, p. 177.
7. Y. Nishioka, S. Kimura, H. Shinriki and K. Mukai: J. Elec- trochem. Soc. 134 (1987) 410.
8. S. Seki, T. Unagami and O. Kogure: J. Electrochem. Soc. 131 (1984) 2457.
9. C. F. Chen, C. Y. Wu, M. K. Lee and C. N. Chen: IEEE Trans. Electron Devices ED-34 (1987) 1540.
10. A. G. Revesz and T. D. Kirkendall: J. Electrochem. Soc. 123 (1976) 1514.