SCOPUS 정보 검색 플랫폼

Volumn 545, Issue , 2013, Pages 458-461

Fully patterned and low temperature transparent ZnO-based inverters

(7) Gutierrez Heredia, G a,b Mejia, I b Rivas Aguilar, M E b Hernandez Como, N b Martinez Landeros, V H a,b Aguirre Tostado, F S a Quevedo Lopez, M A b

a CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS (Mexico)

b The University of Texas at Dallas (United States)

Author keywords

Aluminum doped zinc oxide; Pulsed laser deposition; Thin film transistors; Transparent electronics; Zinc oxide

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; FABRICATION AND CHARACTERIZATIONS; FABRICATION PROCESS; FLEXIBLE AND TRANSPARENT ELECTRONICS; LASER DEPOSITIONS; RISE AND FALL TIME; THIN-FILM TRANSISTOR (TFTS); TRANSPARENT ELECTRONICS;

ALUMINUM; ALUMINUM COATINGS; DEPOSITION; FABRICATION; FLEXIBLE ELECTRONICS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPED POLYMERS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

ZINC OXIDE;

EID: 84884980694 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.07.069 Document Type: Article

Times cited : (19)

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