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Journal of Applied Physics

Volumn 114, Issue 10, 2013, Pages

Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

(7) Cadiz, F a Paget, D a Rowe, A C H a Berkovits, V L b Ulin, V P b Arscott, S c Peytavit, E c

a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE (France)

b IOFFE INSTITUTE (Russian Federation)

c UNIV LILLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; DOPED SEMICONDUCTORS; P TYPE SEMICONDUCTOR; SULFIDE PASSIVATIONS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; SURFACE STATE DENSITY;

GALLIUM ARSENIDE; SURFACE STATES;

SEMICONDUCTING GALLIUM;

EID: 84884948454 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4821139 Document Type: Article

Times cited : (19)

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