Surface Recombination Velocity from Photocurrent Measurements Validation and Applications

Journal of the Electrochemical Society

Volumn 146, Issue 12, 1999, Pages 4640-4646

  Polignano, M L ^a   Bellafiore, N ^a   Caputo, D ^a   Caricato, A P ^b   Modelli, A ^a   Zonca, R ^a  

^a STMICROELECTRONICS   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005832518     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392687     Document Type: Article

References (26)

1. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett., 57, 249 (1986).
2. T. S. Horányi, T. Pavelka, and P. Tüttö, Appl. Surf. Sci., 63, 306 (1993).
3. L. Jastrzebski, Mater. Sci. Eng., B4, 113 (1989).
4. F. Shimura, T. Okui, and T. Kusama, J. Appl. Phys., 67, 7168 (1990).
5. V. Lehmann and H. Föll, J. Electrochem. Soc., 135, 2831 (1988).
6. H. C. Ostendorf and A. L. Endrös, in Mater. Res. Soc. Symp. Proc., 378, 597 (1995).
7. M. L. Polignano, G. Ferroni, A. Sabbadini, G. Valentini, and G. Queirolo, J. Non-Cryst. Solids, 216, 88 (1997).
8. A. W. Stephens, A. G. Aberle, and M. A. Green, J. Appl. Phys., 76, 363 (1994).
9. P. Edelman, A. M. Hoff, L. Jastrzebski, and J. Lagowski, Proc. of the SPIE Microelectronic Manufacturing '94 Conference, Austin, TX (1994).
10. E. Kamieniecki, J. Appl. Phys., 54, 6482 (1983).
11. J. W. Orton and P. Blood, The Electrical Characterization of Semiconductors: Measurements of Minority Carrier Properties, Chap. 8, Academic Press, London (1990).
12. C. M. Hu and C. Drowley, Solid-State Electron., 21, 965 (1978).
13. T. Flohr and R. Helbig, J. Appl. Phys., 66, 3060 (1989).
14. H. Föll, Symposium on Advanced Science and Technology of Silicon Materials, Journal of the Society for the Promotion of Science, Kona, H1 (1991).
15. H. C. H. C. Ostendorf and A. L. Endrös, Appl. Phys. Lett., 71, 3275 (1997).
16. E. N. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley, New York (1982).
17. W. D. Eades and R. M. Swanson, J. Appl. Phys. 58, 4267 (1985).
18. B. E. Deal, E. L. MacKenna, and P. L. Castro, J. Electrochem. Soc., 116, 997 (1969).
19. M. L. Polignano, E. Bellandi, D. Lodi, F. Pipia, A. Sabbadini, F. Zanderigo, G. Queirolo, and F. Priolo, Mater. Sci. Eng., B55, 21 (1998).
20. D. Bouvet, P. A. Clivaz, M. Dutoit, C. Coluzza, J. Almeida, G. Margaritondo, and F. Pio, J. Appl. Phys., 79, 7114 (1996).
21. C. Gerardi, R. Zonca, B. Crivelli, and M. Alessandri, J. Electrochem. Soc., 146, 3058 (1999).
22. R. I. Hedge, P. J. Tobin, K. R. Reid, B. Maiti, and S. Ajura, Appl. Phys. Lett., 66, 2882 (1995).
23. T. Hori, Gate Dielectrics and MOS ULSI, p. 225, Springer Verlag, Berlin (1997).
24. Z. Liu, H. J. Wann, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Electron Device Lett., EDL-13, 402 (1992).
25. B. Letherer, G. Horner, R. G. Cosway, K. Catmull, and M. Peters, Abstract 331, The Electrochemical Society Meeting Abstracts, Vol. 98-2, San Diego, CA, May 3-8, 1998.
26. A. Kamgar and S. J. Hillenius, Appl. Phys. Lett., 51, 1251 (1987).