Imaging ambipolar diffusion of photocarriers in GaAs thin films

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Paget, D ^a   Cadiz, F ^a   Rowe, A C H ^a   Moreau, F ^b   Arscott, S ^c   Peytavit, E ^c  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR DIFFUSION; DIFFUSION CONSTANT; DIFFUSION EQUATIONS; ELECTRON CONCENTRATION; GAAS; GAAS THIN FILMS; LIGHT EXCITATION; LOW LIGHT; LUMINESCENCE INTENSITY; NUMERICAL SOLUTION; PHOTO-CARRIERS; PHYSICAL ANALYSIS; SELF-STANDING FILMS; STEADY-STATE LUMINESCENCE;

EXCITED STATES; GALLIUM ARSENIDE; LASER EXCITATION; LIGHT; LUMINESCENCE; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING GALLIUM;

DIFFUSION;

EID: 84863527448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4730396     Document Type: Article

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