Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers

Applied Physics A: Materials Science and Processing

Volumn 76, Issue 6, 2003, Pages 961-964

  Deenapanray, P N K ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; DEFECTS; ELECTRIC PROPERTIES; ELECTRON TRAPS; HOLE TRAPS; OXIDES; RAPID THERMAL ANNEALING; SILICA; SPECTROSCOPIC ANALYSIS;

NATIVE OXIDE LAYERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037389377     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-1826-5     Document Type: Conference Paper

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