Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

Semiconductors

Volumn 34, Issue 9, 2000, Pages 1068-1072

  Brunkov, P N ^a   Chaldyshev, V V ^a   Chernigovskii A V ^a   Suvorova, A A ^a   Bert, N A ^a   Konnikov, S G ^a   Preobrazhenskii V V ^b   Putyato, M A ^b   Semyagin, B R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034258491     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1309425     Document Type: Article

References (14)

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