Novel two-bit-per-cell resistive-switching memory for low-cost embedded applications

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1662-1664

  Wu, Shih Chieh ^a   Lo, Chieh ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Embedded nonvolatile memory (NVM); Resistive switching (RS); Resistive switching random access memory (RRAM); Two bit per cell

Indexed keywords

BIT DENSITY; EMBEDDED APPLICATION; GATE STACKS; LOGIC TECHNOLOGY; LOW-TEMPERATURE POLY-SI; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; PROCESS MODIFICATIONS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RESISTIVE-SWITCHING RANDOM ACCESS MEMORY (RRAM); SINGLE-POLY; TRANSISTOR CHARACTERISTICS; TWO-BIT-PER-CELL;

CELLS; SWITCHING; SWITCHING SYSTEMS; THIN FILM TRANSISTORS;

RANDOM ACCESS STORAGE;

EID: 81855173615     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167711     Document Type: Article

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