A flexible InGaZnO based 1-bit SRAM under mechanical strain

IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Volumn , Issue , 2011, Pages

  Münzenrieder, Niko ^a   Zysset, Christoph ^a   Kinkeldei, Thomas ^a   Cherenack, Kunigunde ^a   Tröster, Gerhard ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Flexible electronics; InGaZnO; strain; thin film transistors

Indexed keywords

CIRCUIT OPERATION; DEPOSITION TEMPERATURES; ELECTRONIC DEVICE; FLEXIBLE PLASTIC SUBSTRATES; FLEXIBLE POLYIMIDE; FULLY INTEGRATED; INGAZNO; INPUT FREQUENCY; MECHANICAL STRAIN; OUTPUT SIGNAL; SUPPLY VOLTAGES; TENSILE MECHANICAL STRAIN;

AMORPHOUS FILMS; CHIP SCALE PACKAGES; ELECTRON MOBILITY; GALLIUM ALLOYS; INDIUM; POLYIMIDES; SEMICONDUCTING INDIUM; STRAIN; THIN FILM TRANSISTORS; TRANSISTORS;

FLEXIBLE ELECTRONICS;

EID: 82155181840     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCD.2011.6068719     Document Type: Conference Paper

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