Transparent IGZO-based logic gates

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 673-675

  Luo, Haojun ^a   Wellenius, Patrick ^b   Lunardi, Leda ^a   Muth, John F ^a  

^a North Carolina State University   (United States)

^b Phononic Devices Inc   (United States)

Author keywords

Indium gallium zinc oxide (IGZO); Logic gate; Nand gate; Nor gate; Thin film transistors (TFTs); Transparent circuits

Indexed keywords

BETA RATIO; DIGITAL LOGIC; FLEXIBLE SUBSTRATE; GATE LENGTH; INDIUM GALLIUM ZINC OXIDES (IGZO); LOGIC OPERATIONS; NAND GATE; NOR GATES; ON/OFF RATIO; OPERATING SPEED; OPERATION FREQUENCY; OPTICAL TRANSPARENCY; ROOM TEMPERATURE; SATURATION MOBILITY; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS);

GALLIUM; INDIUM; LOGIC GATES; ZINC;

THIN FILM TRANSISTORS;

EID: 84860371926     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186784     Document Type: Article

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