High-responsivity solar-blind photodetector based on Mg 0.46Zn 0.54O thin film

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1033-1035

  Zheng, Qinghong ^a   Huang, Feng ^a   Huang, Jin ^a   Hu, Qichan ^a   Chen, Dagui ^a   Ding, Kai ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

Author keywords

Metal semiconductor metal (MSM); MgZnO; photoconductive gain; solar blind photodetector (SBPD)

Indexed keywords

APPLIED VOLTAGES; CUTOFF WAVELENGTHS; DEEP LEVEL; HIGH SUBSTRATE TEMPERATURE; LOW GROWTH RATE; METAL SEMICONDUCTOR METAL; MGZNO; PEAK RESPONSIVITY; PHOTOCONDUCTIVE GAINS; QUARTZ SUBSTRATE; SOLAR-BLIND PHOTODETECTORS; SPECTRAL MEASUREMENT; WURTZITES;

FILM GROWTH; QUARTZ; ZINC; ZINC SULFIDE;

PHOTODETECTORS;

EID: 84862854378     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2196675     Document Type: Article

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