Solar-Blind Photoresistors Based on Mg 0.48Zn 0.52O thin films grown on r-Al 2O 3 substrates by radio-frequency plasma-assisted molecular beam epitaxy

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1970-1973

  Liu, F J ^a   Hu, Z F ^a   Zhu, L ^a   Li, Z J ^a   Huang, H Q ^a   Zhao, J W ^a   Zhang, X Q ^a   Wang, Y S ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

a plane MgZnO; photoresistor; resistance; solar blind

Indexed keywords

A-PLANE; HIGH QUALITY; LIGHT INTENSITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIO FREQUENCIES; RESPONSIVITY; SAPPHIRE SUBSTRATES; SOLAR BLIND; SOLAR BLIND REGION; SPECTRAL RESPONSE; WURTZITES; X-RAY DIFFRACTION AND ABSORPTION;

ELECTRIC RESISTANCE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC SULFIDE;

PHOTORESISTORS;

EID: 84862683567     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2193886     Document Type: Article

References (20)

1. M. D. Vittorio, B. Pot, M. T. Todaro, M. C. Frassanito, A. Pomarico, A. Passaseo, M. Lomascolo, and R. Cingolani, "High temperature characterization of GaN-based photodetectors," Sens. Actuators A, Phys., vol. 113, no. 3, pp. 329-333, Aug. 2004.
2. N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay, "Highspeed solar-blind photodetectors with indium-tin-oxide Schottky contacts," Appl. Phys. Lett., vol. 82, no. 14, pp. 2344-2346, Apr. 2003.
3. I. Ferguson, C. A. Tran, R. F. Karlicek, Jr, Z. C. Feng, R. Stall, S. Liang, Y. Lu, and C. Joseph, "GaN and AlGaN metal-semiconductormetal photodetectors," Mater. Sci. Eng. B., vol. 50, no. 1-3, pp. 311-314, Dec. 1997.
4. A. Asgari, E. Ahmadi, and M. Kalafi, " AlxGa1-xN/GaNmulti- quantumwell ultraviolet detector based on p-i-n heterostructures," Microelectron. J., vol. 40, no. 1, pp. 104-107, Jan. 2009.
5. S. G. Hur, E. T. Kim, J. H. Lee, G. H. Kim, and S. G. Yoon, "Enhancement of photosensitivity in CdS thin films incorporated by hydrogen," Electrochem. Solid-State Lett., vol. 11, no. 7, pp. H176-H178, Apr. 2008.
6. K. Y. Zhang, C. G. Hu, Y. S. Tian, C. H. Zheng, and B. Y. Wan, "Stable and highly photosensitive device of CdSe nanorods," Phys. E, vol. 43, no. 4, pp. 943-947, Feb. 2011.
7. E. Pentia, L. Pintilie, I. Matei, T. Botila, and I. Pintilie, "Combined chemical-physical methods for enhancing IR photoconductive properties of PbS thin films," Infrared Phys. Technol., vol. 44, no. 3, pp. 207-211, Jun. 2003.
8. M. Simma, D. Lugovyy, T. Fromherz, A. Raab, G. Springholz, and G. Bauer, "Deformation potentials and photo-response of strained PbSe quantum wells and quantum dots," Phys. E, vol. 32, no. 1/2, pp. 123-126, May 2006.
9. F. J. Liu, Z. F. Hu, Z. J. Li, H. Q. Huang, J.W. Zhao, X. Q. Zhang, and Y. S.Wang, "Ultraviolet photoresistors based on ZnO thin films grown by P-MBE," Solid-State Electron., vol. 68, pp. 90-92, Feb. 2012.
10. Z. G. Ju, C. X. Shan, D. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, " MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range," Appl. Phys. Lett., vol. 93, no. 17, pp. 173 505-1-173 505-8, Oct. 2008.
11. V. Chivukula, D. Ciplys, A. Sereika, M. Shur, J. Yang, and R. Gaska, "AlGaN based highly sensitive radio-frequency UV sensor," Appl. Phys. Lett., vol. 96, no. 16, pp. 163 504-1-163 504-3, Apr. 2010.
12. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, "Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices," Appl. Phys. Lett., vol. 95, no. 13, pp. 131 113-1-131 113-3, Sep. 2009.
13. Y. N. Hou, Z. X. Mei, Z. L. Liu, T. C. Zhang, and X. L. Du, "Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain," Appl. Phys. Lett., vol. 98, no. 10, pp. 103 506-1-103 506-3, Mar. 2011.
14. W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, and H. Shen, "Compositionally-tuned epitaxial cubic MgxZn1-xO on Si (100) for deep ultraviolet photodetectors," Appl. Phys. Lett., vol. 82, no. 20, pp. 3424-3426, May 2003.
15. W. I. Park, G. C. Yi, and H. M. Jang, "Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO (0 = x = 0.49) thin films," Appl. Phys. Lett., vol. 79, no. 13, pp. 2022-2024, Sep. 2001.
16. Z. L. Liu, Z. X. Mei, T. C. Zhang, Y. P. Liu, Y. Guo, X. L. Du, A. Hallen, J. J. Zhu, and A. Yu. Kuznetsov, "Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffer," J. Cryst. Growth, vol. 311, no. 18, pp. 4356-4359, Sep. 2009.
17. Q. H. Zheng, F. Huang, K. Ding, J. Huang, D. G. Chen, Z. B. Zhan, and Z. Lin, "MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates," Appl. Phys. Lett., vol. 98, no. 22, pp. 221 112-1-221 112-3, May 2011.
18. G. Saraf, Y. Lu, and T. Siegrist, "Mg composition dependent strain analysis in nonpolar a-plane MgxZn1-xO films," Appl. Phys. Lett., vol. 93, no. 15, pp. 151 907-1-151 907-3, Oct. 2008.
19. F. J. Liu, R. Zhang, Z. F. Hu, J. Sun, H. Q. Huang, Z. J. Li, J. W. Zhao, P. G. Yin, L. Guo, X. Q. Zhang, and Y. S. Wang, "Structural and optical properties of nonpolar (1120) ZnO films grown by plasmaassisted molecular-beam epitaxy," IEEE Trans. Plasma Sci., vol. 39, no. 2, pp. 700-703, Feb. 2011.
20. S. K. J. Al-Ani, H. H. Mohammed, and E. M. N. Al-Fwade, "The optoelectronic properties of CdSe:Cu photoconductive detector," Renew. Energ., vol. 25, no. 4, pp. 585-590, Apr. 2002.