Bidirectional direct-current electroluminescence from i -Mgx Zn1-x O/n-ZnO/ SiOx double-barrier heterostructures on Si

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Chen, Peiliang ^a   Ma, Xiangyang ^a   Li, Dongsheng ^a   Zhang, Yuanyuan ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTALS; HETEROJUNCTIONS; LIGHT EMISSION; LUMINESCENCE; SILICON; SILICON COMPOUNDS; ZINC;

DIRECT CURRENTS; DOUBLE BARRIERS; ENERGY BAND STRUCTURES; HETEROSTRUCTURE; HETEROSTRUCTURES; HIGH CURRENTS; LOW CURRENTS; NEGATIVE VOLTAGES; REVERSE BIAS; ULTRA VIOLETS; UV EMISSIONS; VISIBLE EMISSIONS;

ELECTROLUMINESCENCE;

EID: 60349086379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081109     Document Type: Article

References (19)

1. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. -J. Cho, and H. Morko̧, J. Appl. Phys. 0021-8979 10.1063/1.1992666 98, 041301 (2005).
2. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 0079-6425 10.1016/j.pmatsci.2004.04.001 50, 293 (2005).
3. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Mater. 1476-1122 10.1038/nmat1284 4, 42 (2005).
4. J. -H. Lim, C. -K. Kang, K. -K. Kim, I. -K. Park, D. -K. Hwang, and S. -J. Park, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200502633 18, 2720 (2006).
5. Y. Ryu, T. -S. Lee, J. A. Lubguban, H. W. White, B. -J. Kim, Y. -S. Park, and C. -J. Youn, Appl. Phys. Lett. 0003-6951 10.1063/1.2210452 88, 241108 (2006).
6. J. C. Sun, J. Z. Zhao, H. W. Liang, J. M. Bian, L. Z. Hu, H. Q. Zhang, X. P. Liang, W. F. Liu, and G. T. Du, Appl. Phys. Lett. 0003-6951 10.1063/1.2716206 90, 121128 (2007).
7. H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, Appl. Phys. Lett. 0003-6951 10.1063/1.127015 77, 475 (2000).
8. Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 0003-6951 10.1063/1.1632537 83, 4719 (2003).
9. C. Yuen, S. F. Yu, S. P. Lau, Rusli, and T. P. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.1947889 86, 241111 (2005).
10. P. L. Chen, X. Y. Ma, and D. R. Yang, J. Appl. Phys. 0021-8979 10.1063/1.2464185 101, 053103 (2007).
11. S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, Appl. Phys. Lett. 0003-6951 10.1063/1.2957465 93, 013506 (2008).
12. Y. I. Alivov, D. C. Look, B. M. Ataev, M. V. Chukichev, V. V. Mamedov, V. I. Zinenko, Y. A. Agafonov, and A. N. Pustovit, Solid-State Electron. 0038-1101 10.1016/j.sse.2004.05.063 48, 2343 (2004).
13. P. L. Chen, X. Y. Ma, and D. R. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.2352722 89, 111112 (2006).
14. H. -T. Wang, B. S. Kang, J. -J. Chen, T. Anderson, S. Jang, F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, and S. J. Pearton, Appl. Phys. Lett. 0003-6951 10.1063/1.2186508 88, 102107 (2006).
15. D. -K. Hwang, M. -S. Oh, J. -H. Lim, Y. -S. Choi, and S. -J. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.2786603 91, 121113 (2007).
16. X. Y. Ma, P. L. Chen, D. S. Li, Y. Y. Zhang, and D. R. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.2826543 91, 251109 (2007).
17. J. L. Zhao, X. W. Sun, S. T. Tan, G. Q. Lo, D. L. Kwong, and Z. H. Cen, Appl. Phys. Lett. 0003-6951 10.1063/1.2824813 91, 263501 (2007).
18. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 0003-6951 10.1063/1.124573 75, 980 (1999).
19. L. Rebohle, J. von Borany, H. Frob, T. Gebel, M. Helm, and W. Skorupa, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/S0168-583X(01)01004-7 188, 28 (2002).