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Volumn 24, Issue 41, 2013, Pages

Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT BEHAVIOR; CONTACT GEOMETRY; DEPLETION REGION; ELECTRICAL BEHAVIORS; ELECTRICAL POTENTIAL; FUTURE APPLICATIONS; KELVIN PROBE FORCE MICROSCOPY; NANOSCALE FIELD-EFFECT TRANSISTORS;

EID: 84884618720     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/41/415202     Document Type: Article
Times cited : (30)

References (33)
  • 3
    • 33646747230 scopus 로고    scopus 로고
    • Space charge limited currents and trap concentrations in GaAs nanowires
    • DOI 10.1088/0957-4484/17/10/040, PII S0957448406070437
    • Schricker A D, Davidson F M III, Wiacek R J and Korgel B A 2006 Nanotechnology 17 2681 (Pubitemid 43745811)
    • (2006) Nanotechnology , vol.17 , Issue.10 , pp. 2681-2688
    • Schricker, A.D.1    Davidson III, F.M.2    Wiacek, R.J.3    Korgel, B.A.4
  • 24
    • 0036329409 scopus 로고    scopus 로고
    • Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy
    • DOI 10.1016/S0304-3991(02)00091-8, PII S0304399102000918
    • Ono S, Takeuchib M and Takahashi T 2002 Ultramicroscopy 91 127 (Pubitemid 34831627)
    • (2002) Ultramicroscopy , vol.91 , Issue.1-4 , pp. 127-132
    • Ono, S.1    Takeuchi, M.2    Takahashi, T.3
  • 30
    • 17044424574 scopus 로고    scopus 로고
    • Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes
    • DOI 10.1063/1.1851621, 032111
    • Fan Z and Lu J G 2005 Appl. Phys. Lett. 86 032111 (Pubitemid 40493472)
    • (2005) Applied Physics Letters , vol.86 , Issue.3 , pp. 1-3
    • Fan, Z.1    Lu, J.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.